Datasheet > 2SD1622-S

2SD1622-S

更新时间： 2024-11-17 01:05:31

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
3页	1193K
描述
NPN Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1622-S 数据手册

SMD Type

Transistors

NPN Transistors

2SD1622

1.70 0.1

■ Features

● Very small size making it easy to provide highdensity,

small-sized hybrid IC’s.

0.42 0.1

0.46 0.1

● Complementary to 2SB1122

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

(Note.1)

Symbol

Rating

Unit

VCBO

VCEO

VEBO

0.5

℃

1.3

Junction Temperature

150

Storage Temperature Range

stg

-55 to 150

Note.1:Mounted on ceramic board (250mm²×0.8mm)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 uA， I

Ic= 1 mA，RBE= ∞

= 100 uA， I = 0

CB= 50 V , I = 0

EB= 4V , I =0

E= 0

CBO

EBO

0.1

0.3

1.2

560

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=500 mA, I

=50 mA

0.12

0.9

=500 mA, I

CE= 2V, I

= 100 mA

= 1 A

100

DC current gain

hFE

Turn-ON Time

350

See specified Test Circuit.

Storage Time

stg

Fall Time

Collector output capacitance

Transition frequency

^CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

8.5

150

= 50mA

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1622-R

100-200

DE R*

2SD1622-S

140-280

DE S*

2SD1622-T

200-400

DE T*

2SD1622-U

280-560

DE U*

www.kexin.com.cn

12 3

中文翻译

下载PDF

与2SD1622-S相关器件

型号	品牌	获取价格	描述	数据表
2SD1622T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SOT-89
2SD1622-T	KEXIN	获取价格	NPN Transistors
2SD1622U	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SOT-89
2SD1622-U	KEXIN	获取价格	NPN Transistors
2SD1623	TYSEMI	获取价格	Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
2SD1623	ONSEMI	获取价格	Bipolar Transistor (â)50V, (â)2A, Low VCE
2SD1623	SANYO	获取价格	High-Current Switching Applications
2SD1623	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SD1623_15	KEXIN	获取价格	NPN Transistors
2SD1623R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 2A I(C) \| SOT-89