Datasheet > 2SD1531

2SD1531

更新时间： 2022-12-26 14:37:40

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	228K
描述
Silicon NPN Power Transistor

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2SD1531 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD1531

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 40V(Min)

·Good Linearity of h_FE

·Low Collector Saturation Voltage

APPLICATIONS

·Designed for AF output amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Current-Peak

I_CP

Collector Power Dissipation

@ T_C=25℃

P_C

Collector Power Dissipation

@ T_a=25℃

1.2

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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