2SD1535

更新时间： 2024-11-25 22:52:47

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描述
Silicon NPN triple diffusion planar type Darlington(For high power amplification)

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中文翻译

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数据手册

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2SD1535 数据手册

Power Transistors

2SD1535

Silicon NPN triple diffusion planar type Darlington

For high power amplification

Unit: mm

10.0±0.2

5.5±0.2

4.2±0.2

2.7±0.2

Features

■

●

Extremely satisfactory linearity of the forward current transfer

φ3.1±0.1

ratio h_FE

●

High collector to base voltage V_CBO

●

Wide area of safe operation (ASO)

●

Full-pack package which can be installed to the heat sink with

one screw

1.3±0.2

1.4±0.1

+0.2

–0.1

0.5

0.8±0.1

Absolute Maximum Ratings (T =25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

2.54±0.25

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

500

5.08±0.5

400

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

I_C

Internal Connection

Base current

I_B

0.5

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

V_CB= 500V, I_E= 0

Collector cutoff current

I_CEO

V_CE= 400V, I_B= 0

0.1

Emitter cutoff current

I_EBO

V_EB= 12V, I_C= 0

100

Collector to emitter voltage

V_CEO(sus)

h_FE1

I_C= 100mA, R_BZ= ∞, L = 25mH

V_CE= 2V, I_C= 2A

400

500

200

Forward current transfer ratio

h_FE2

V_CE= 2V, I_C= 6A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 7A, I_B= 70mA

2.0

2.5

I_C= 7A, I_B= 70mA

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 1MHz

1.5

5.0

6.5

MHz

µs

I_C= 7A, I_B1= 70mA, I_B2= –70mA,

V_CC= 300V

µs

^*V_CEO(sus)Test circuit

60Hz

I_C(A)

0.2

L 25mH

120Ω

0.1

1Ω

15V

V_CE(V)

中文翻译

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