2SD1535

更新时间： 2024-11-26 07:31:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	74K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD1535 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1535

DESCRIPTION

·With TO-220Fa package

·Wide area of safe operation

·High breakdown voltage

·DARLINGTON

APPLICATIONS

·For high power amplification

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

500

400

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

0.5

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

2.0

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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