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2SD1538AP PDF预览

2SD1538AP

更新时间: 2024-11-25 23:20:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
4页 57K
描述
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 4A I(C) | TO-221VAR

2SD1538AP 数据手册

 浏览型号2SD1538AP的Datasheet PDF文件第2页浏览型号2SD1538AP的Datasheet PDF文件第3页浏览型号2SD1538AP的Datasheet PDF文件第4页 
Power Transistors  
2SD1538, 2SD1538A  
Silicon NPN epitaxial planar type  
Unit: mm  
3.4±0.3  
8.5±0.2  
6.0±0.5  
For low-voltage switching  
1.0±0.1  
Complementary to 2SB1070 and 2SB1070A  
Features  
Low collector to emitter saturation voltage VCE(sat)  
1.5max.  
1.1max.  
0.5max.  
High-speed switching  
N type package enabling direct soldering of the radiating fin to  
0.8±0.1  
the printed circuit board, etc. of small electronic equipment.  
2.54±0.3  
5.08±0.5  
Absolute Maximum Ratings (T =25˚C)  
1:Base  
2:Collector  
3:Emitter  
C
1
2
3
Parameter  
Symbol  
Ratings  
Unit  
N Type Package  
Collector to  
2SD1538  
2SD1538A  
2SD1538  
40  
VCBO  
V
Unit: mm  
3.4±0.3  
base voltage  
Collector to  
50  
8.5±0.2  
6.0±0.3  
1.0±0.1  
20  
VCEO  
V
emitter voltage 2SD1538A  
Emitter to base voltage  
Peak collector current  
Collector current  
40  
VEBO  
ICP  
5
V
A
A
8
IC  
4
25  
R0.5  
R0.5  
0.8±0.1  
Collector power TC=25°C  
0 to 0.4  
2.54±0.3  
1.1 max.  
PC  
W
5.08±0.5  
dissipation  
Ta=25°C  
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
1:Base  
2:Collector  
3:Emitter  
1
2
3
Tstg  
–55 to +150  
N Type Package (DS)  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Collector cutoff  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
50  
Unit  
µA  
µA  
V
2SD1538  
VCB = 40V, IE = 0  
current  
2SD1538A  
VCB = 50V, IE = 0  
VEB = 5V, IC = 0  
50  
Emitter cutoff current  
IEBO  
VCEO  
hFE1  
50  
Collector to emitter 2SD1538  
voltage 2SD1538A  
20  
40  
45  
90  
IC = 10mA, IB = 0  
VCE = 2V, IC = 0.1A  
VCE = 2V, IC = 1A  
Forward current transfer ratio  
*
hFE2  
260  
0.5  
1.5  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 2A, IB = 0.1A  
V
V
IC = 2A, IB = 0.1A  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = 5V, IC = 0.5A, f = 10MHz  
120  
0.2  
0.5  
0.1  
MHz  
µs  
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,  
VCC = 20V  
µs  
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
P
90 to 180  
130 to 260  
1

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