是否无铅: | 不含铅 | 生命周期: | Lifetime Buy |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.45 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 15 A | 集电极-发射极最大电压: | 450 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 150 W | 最大功率耗散 (Abs): | 150 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 12300 ns |
最大开启时间(吨): | 1000 ns | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1314_06 | TOSHIBA |
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High Power Switching Applications | |
2SD1315 | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 5A I(C) | SOT-186 | |
2SD1315P | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 5A I(C) | SOT-186 | |
2SD1315Q | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 5A I(C) | SOT-186 | |
2SD1316 | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 2A I(C) | SOT-186 | |
2SD1316H | PANASONIC |
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Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 | |
2SD1316P | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 2A I(C) | TO-221VAR | |
2SD1316Q | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 2A I(C) | TO-221VAR | |
2SD1316R | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 2A I(C) | TO-221VAR | |
2SD1316TX | PANASONIC |
获取价格 |
Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 |