Datasheet > 2SD1314_06

2SD1314_06

更新时间： 2024-11-02 07:31:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	142K
描述
High Power Switching Applications

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中文翻译

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数据手册

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2SD1314_06 数据手册

2SD1314

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)

2SD1314

High Power Switching Applications

Unit: mm

Motor Control Applications

•

High DC current gain: h

= 100 (min) (V

= 5 V, I = 15 A)

CE C

Low saturation voltage: V

= 2 V (max) (I = 15 A, I = 0.4 A)

C B

CE (sat)

High speed: t = 3 μs (max) (I = 15 A)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

600

450

Collector-emitter voltage

Emitter-base voltage

Collector current

Pulse

Base current

1.0

150

JEDEC

JEITA

―

Collector power dissipation

Junction temperature

°C

TOSHIBA

2-21F1A

Storage temperature range

stg

−55 to 150

Weight: 9.75 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

EMITTER

BASE

≈ 300 Ω

≈ 100 Ω

2006-11-21

12 3 4 5

中文翻译

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2SD1316R	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 30V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SD1316TX	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2
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