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2SD1033

更新时间: 2024-11-24 06:22:47
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
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1页 39K
描述
Silicon NPN Epitaxial Transistor

2SD1033 数据手册

  
SMD Type  
Transistors  
Silicon NPN Epitaxial Transistor  
2SD1033  
TO-252  
Unit: mm  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Features  
High Voltage VCEO=150V  
0.127  
0.80+0.1  
max  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
200  
Collector to emitter voltage  
Emitter to base voltage  
150  
V
5
V
Peak collector current *1  
3
A
Collector current  
IC  
2
A
PT  
2
W
Collector power dissipation Ta = 25 *2  
Junction temperature  
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
* PW 10ms,Duty Cycle 50%  
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Symbol  
ICBO  
Testconditons  
Min  
40  
Typ  
Max  
50  
Unit  
ìA  
VCB = 150V, IE = 0  
Emitter cutoff current  
IEBO  
VEB = 4V, IC = 0  
50  
ìA  
DC Current Gain *  
hFE  
VCE=10V,IC=0.4A  
IC = 500mA, IB = 0.4A  
VCE=10V,IE=0.4A  
100  
0.2  
10  
200  
1.0  
Collector saturation voltage *  
Gain saturation Voltage  
* PW 350ìs,Duty cycle 2%  
VCE(sat)  
fT  
V
MHZ  
hFE Classification  
Marking  
hFE  
M
L
K
40 to 80  
60 to 120  
100 to 200  
1
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