Datasheet > 2SD1001-M

2SD1001-M

更新时间： 2022-02-26 11:38:52

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1148K
描述
NPN Transistors

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数据手册

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2SD1001-M 数据手册

SMD Type

Transistors

NPN Transistors

2SD1001

■ Features

1.70 0.1

● High collector saturation voltage.

CE(sat) > 80V

● Complimentary to 2SB800

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

300

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

500

150

℃

Storage Temperature Range

stg

-55 to 150

Note.1: Pw ≤ 100ms,duty cycle ≤ 50℅

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， R^BE= ∞

= 100μA， I = 0

CB= 80 V , I = 0

^EB= 5V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.6

1.2

700

400

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

(Note.1)

CE(sat)

BE(sat)

=300 mA, I

=30mA

0.15

0.86

645

200

(Note.1)

^C=300 mA, I

^CE= 6V, I

CE= 1V, I

CE=2V, I

CB= 6V, I

^CE= 6V, I

= 10mA

= 50mA

= 300mA

600

DC current gain

(Note.1)

hFE

Collector output capacitance

Transition frequency

=0,f=1MHz

= -10mA

140

MHz

Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■ Classification of hfe(1)

Type

Range

Marking

2SD1001- M

90-180

2SD1001- L

135-270

2SD1001- K

200-400

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