Datasheet > 2SD1005

2SD1005

更新时间： 2024-10-15 18:09:11

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	1358K
描述
SOT-89

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中文翻译

获取价格

数据手册

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2SD1005 数据手册

2SD1005

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to 2SB804

 Excellent h_FELinearity

 High Breakdown Voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

100

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

500

°C/W

°C

R_θJA

Thermal Resistance From Junction To Ambient

Junction Temperature

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =100uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

100

，

V(BR)CEO

V(BR)EBO

I_CBO

I_C=1mA，I_B=0

I_E=100uA，I_C=0

0.1

400

uA V_CB=100V, I_E=0

Emitter cut-off current

V_EB=5V, I_C=0

I_EBO

h_FE1

V_CE=2V, I_C=100mA

V_CE=2V, I_C=500mA

I_C=500mA，I_B=50mA

V_CE=10V, I_C=10mA

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

V_BE

0.5

1.5

0.7

0.6

Transition frequency

f_T

160

MHz V_CE=5V, I_C=10mA

V_CB=10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

90-180

135-270

200-400

Marking

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

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