Datasheet > 2SD1005

2SD1005

更新时间： 2024-11-24 07:31:19

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	337K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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2SD1005 数据手册

2SD1005

TRANSISTOR (NPN)

SOT-89-3L

FEATURES

Small Flat Package

1. BASE

High Breakdown Voltage

Excellent DC Current Gain Linearity

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

100

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=0.1mA,I_E=0

I_C=1mA,I_B=0

I_E=0.1mA,I_C=0

V_CB=100V,I_E=0

0.1

400

µA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

h_FE(1)

V_CE=2V, I_C=100mA

V_CE=2V, I_C=500mA

I_C=500mA,I_B=50mA

V_CE=10V, I_C=10mA

V^CE=5V,I^C=10mA

V_CB=10V, I_E=0, f=1MHz

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

0.5

1.5

0.7

V_BE(sat)

V_BE

f_T

0.6

160

MHz

Transition frequency

Collector output capacitance

C_ob

*Pulse test

CLASSIFICATION OF h_FE

（

）

RANK

RANGE

90–180

135–270

200–400

MARKING

JinYu

semiconductor

www.htsemi.com

中文翻译

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