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2SC829B PDF预览

2SC829B

更新时间: 2024-11-18 23:20:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
3页 58K
描述
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92

2SC829B 数据手册

 浏览型号2SC829B的Datasheet PDF文件第2页浏览型号2SC829B的Datasheet PDF文件第3页 
Transistor  
2SC829  
Silicon NPN epitaxial planer type  
For high-frequency amplification  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
Optimum for RF amplification, oscillation, mixing, and IF stage  
of FM/AM radios.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
0.45+00..12  
0.45+00..12  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
1.27  
1.27  
20  
V
5
30  
V
mA  
mW  
˚C  
1 2 3  
1:Emitter  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
2.54±0.15  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
typ  
max  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Forward current transfer ratio  
Transition frequency  
IC = 10µA, IE = 0  
30  
20  
5
VCEO  
VEBO  
IC = 2mA, IB = 0  
V
IE = 10µA, IC = 0  
V
*
hFE  
VCE = 10V, IC = 1mA  
70  
150  
250  
fT  
VCB = 10V, IC = 1mA, f = 200MHz  
VCE = 10V, IC = 1mA, f = 10.7MHz  
VCB = 10V, IE = –1mA, f = 2MHz  
230  
1.3  
MHz  
pF  
Common emitter reverse transfer capacitance Cre  
1.6  
60  
Reverse transfer impedance  
Zrb  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 160  
110 ~ 250  
1

2SC829B 替代型号

型号 品牌 替代类型 描述 数据表
2SC829C PANASONIC

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