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2SC829C PDF预览

2SC829C

更新时间: 2024-02-08 19:31:36
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
3页 58K
描述
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92

2SC829C 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92-B1, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.79
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):110
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.4 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):230 MHz
Base Number Matches:1

2SC829C 数据手册

 浏览型号2SC829C的Datasheet PDF文件第2页浏览型号2SC829C的Datasheet PDF文件第3页 
Transistor  
2SC829  
Silicon NPN epitaxial planer type  
For high-frequency amplification  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
Optimum for RF amplification, oscillation, mixing, and IF stage  
of FM/AM radios.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
0.45+00..12  
0.45+00..12  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
1.27  
1.27  
20  
V
5
30  
V
mA  
mW  
˚C  
1 2 3  
1:Emitter  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
2.54±0.15  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
typ  
max  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Forward current transfer ratio  
Transition frequency  
IC = 10µA, IE = 0  
30  
20  
5
VCEO  
VEBO  
IC = 2mA, IB = 0  
V
IE = 10µA, IC = 0  
V
*
hFE  
VCE = 10V, IC = 1mA  
70  
150  
250  
fT  
VCB = 10V, IC = 1mA, f = 200MHz  
VCE = 10V, IC = 1mA, f = 10.7MHz  
VCB = 10V, IE = –1mA, f = 2MHz  
230  
1.3  
MHz  
pF  
Common emitter reverse transfer capacitance Cre  
1.6  
60  
Reverse transfer impedance  
Zrb  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 160  
110 ~ 250  
1

2SC829C 替代型号

型号 品牌 替代类型 描述 数据表
KSC838 SAMSUNG

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