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2SC828

更新时间: 2024-11-19 20:15:23
品牌 Logo 应用领域
MICRO-ELECTRONICS 放大器晶体管
页数 文件大小 规格书
1页 50K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2SC828 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.53最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):65JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SC828 数据手册

  

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型号 品牌 获取价格 描述 数据表
2SC828A MICRO-ELECTRONICS

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Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC828A PANASONIC

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Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC828A SWST

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小信号晶体管
2SC828AQ PANASONIC

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Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC828AS PANASONIC

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Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC828Q PANASONIC

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Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC829 PANASONIC

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Silicon NPN epitaxial planer type(For high-frequency amplification)
2SC829 ONSEMI

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TRANSISTOR TRANSISTOR,BJT,NPN,20V V(BR)CEO,30MA I(C),TO-92, BIP General Purpose Small Sign
2SC829B PANASONIC

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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
2SC829C PANASONIC

获取价格

TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92