Datasheet > 2SC5245-3

2SC5245-3

更新时间： 2024-10-29 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
5页	157K
描述
TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 30MA I(C) \| SC-70

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2SC5245-3 数据手册

Ordering number:EN5184A

NPN Epitaxial Planar Silicon Transistor

2SC5245

UHF to S-Band Low-Noise Amplifier,

OSC Applications

Features

Package Dimensions

unit:mm

· Low noise : NF=0.9dB typ (f=1GHz).

: NF=1.4dB typ (f=1.5GHz).

2059B

· High gain : S21e ²=10dB typ (f=1.5GHz).

· High cutoff frequency : f =11GHz typ.

· Low-voltage, low-current operation

[2SC5245]

0.3

0.15

(V =1V, I =1mA)

: f =7GHz type.

0 to 0.1

S21e ²=5.5dB typ (f=1.5GHz).

0.3

0.6

0.65 0.65

0.9

2.0

1 : Base

2 : Emitter

3 : Collector

SANYO : MCP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

1.5

EBO

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

˚C

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=10V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=1V, I =0

EBO

=5V, I =10mA

=1V, I =1mA

=10V, f=1MHz

60*

270*

f 1

f 2

GHz

Gain-Bandwidth Product

0.45

0.30

Output Capacitance

Cob

0.7

Reverse Transfer Capacitance

Cre

=10V, f=1MHz

* : The 2SC5245 is classified by 10mA h as follows :

Continued on next page.

120 90

180 135

270

Marking : MN

rank : 3, 4, 5

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

20599TH (KT)/D2696TS/90195YK (KOTO) TA-0209 No.5184–1/5

12 3 4 5

中文翻译

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与2SC5245-3相关器件

型号	品牌	获取价格	描述	数据表
2SC5245-4	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 30MA I(C) \| SC-70
2SC5245-5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 30MA I(C) \| SC-70
2SC5245A	SANYO	获取价格	UHF to S-Band Low-Noise Amplifier OSC Applications
2SC5245A_12	SANYO	获取价格	UHF to S-Band Low-Noise Amplifier OSC Applications
2SC5245A-4-TL-E	ONSEMI	获取价格	RF Transistor, NPN Single MCP, 10 V, 30 mA, fT = 8 GHz
2SC5245A-5	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,30MA I(C),SC-70
2SC5246	HITACHI	获取价格	Silicon NPN Epitaxial
2SC5246ZC	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN
2SC5246ZC-TL	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SMPAK-3
2SC5246ZC-TR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili

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