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2SC5216 PDF预览

2SC5216

更新时间: 2024-11-11 22:52:43
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 38K
描述
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

2SC5216 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.05 A
基于收集器的最大容量:1.4 pF集电极-发射极最大电压:8 V
配置:SINGLE最小直流电流增益 (hFE):100
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1300 MHzBase Number Matches:1

2SC5216 数据手册

 浏览型号2SC5216的Datasheet PDF文件第2页 
Transistor  
2SC5216  
Silicon NPN epitaxial planer type  
For high-frequency amplification/oscillation/mixing  
Unit: mm  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
High transition frequency fT.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
3
Absolute Maximum Ratings (Ta=25˚C)  
0.1 to 0.3  
0.4±0.2  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
8
V
3
50  
V
1:Base  
JEDEC:TO–236  
EIAJ:SC–59  
Mini Type Package  
2:Emitter  
3:Collector  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
Marking symbol : FB  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
IEBO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Emitter cutoff current  
V
EB = 2V, IC = 0  
2
Collector to base voltage  
Forward current transfer ratio  
VCBO  
hFE  
IC = 100µA, IE = 0  
15  
VCE = 4V, IC = 2mA  
100  
350  
0.5  
Collector to emitter saturation voltage VCE(sat)  
I
C = 20mA, IB = 4mA  
V
V
Base to emitter voltage  
Transition frequency  
VBE  
fT  
VCE = 4V, IC = 2mA  
0.7  
1.3  
1.0  
0.4  
18  
VCB = 10V, IE = –15mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
VCB = 6V, IE = 0, f = 1MHz  
VCB = 10V, IE = –10mA, f = 200MHz  
VCE = 4V, IC = 100µA  
0.8  
0.6  
1.9  
1.4  
GHz  
pF  
Collector output capacitance  
Cob  
Common emitter reverse transfer capacitance Crb  
pF  
Power gain  
PG  
14  
22  
dB  
hFE ratio  
hFE(RATIO)  
0.6  
1.5  
VCE = 4V, IC = 2mA  
1

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