Datasheet > 2SC5226-3

2SC5226-3

更新时间： 2024-11-11 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
5页	114K
描述
TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 70MA I(C) \| SOT-323

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中文翻译

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2SC5226-3 数据手册

Ordering number:EN5032A

NPN Epitaxial Planar Silicon Transistor

2SC5226

VHF to UHF Wide-Band Low-Noise

Amplifier Applications

Features

Package Dimensions

unit:mm

· Low noise : NF=1.0dB typ (f=1GHz).

· High gain : S21e ²=12dB typ (f=1GHz).

· High cutoff frequency : f =7GHz typ.

2059B

[2SC5226]

0.3

0.15

0 to 0.1

0.3

0.6

0.65 0.65

0.9

2.0

1 : Base

2 : Emitter

3 : Collector

SANYO : MCP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=10V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=1V, I =0

EBO

=5V, I =20mA

60*

270*

Gain-Bandwidth Product

Output Capacitance

0.75

0.5

GHz

Cob

=10V, f=1MHz

1.2

1.8

Reverse Transfer Capacitance

Forward Transfer Gain

Cre

=10V, f=1MHz

| S21e |²(1)

| S21e |²(2)

=5V, I =20mA, f=1GHz

=2V, I =3mA, f=1GHz

Noise Figure

=5V, I =7mA, f=1GHz

1.0

* : The 2SC5226 is classified by 20mA h as follows :

Marking : LN

rank : 3, 4, 5

120 90

180 135

270

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22299TS (KOTO) TA-0079 No.5032–1/5

12 3 4 5

中文翻译

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与2SC5226-3相关器件

型号	品牌	获取价格	描述	数据表
2SC5226-4	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 70MA I(C) \| SOT-323
2SC5226-5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 70MA I(C) \| SOT-323
2SC5226A	SANYO	获取价格	VHF to UHF Wide-Band Low-Noise Amplifier Applications
2SC5226A_12	SANYO	获取价格	VHF to UHF Wide-Band Low-Noise Amplifi er Applications
2SC5226A-4-TL-E	SANYO	获取价格	VHF to UHF Wide-Band Low-Noise Amplifi er Applications
2SC5226A-4-TL-E	ONSEMI	获取价格	射频晶体管，NPN 单 MCP，10 V，70 mA，fT = 7 GHz
2SC5226A-5	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,70MA I(C),SOT-323
2SC5226A-5-TL-E	SANYO	获取价格	VHF to UHF Wide-Band Low-Noise Amplifi er Applications
2SC5226A-5-TL-E	ONSEMI	获取价格	射频晶体管，NPN 单 MCP，10 V，70 mA，fT = 7 GHz
2SC5226A-D	SANYO	获取价格	VHF to UHF Wide-Band Low-Noise Amplifi er Applications

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