Datasheet > 2SC5200C-O-AL-N-D

2SC5200C-O-AL-N-D

更新时间： 2022-02-26 09:38:54

品牌	Logo	应用领域
华微电子 - JSMC		/
页数	文件大小	规格书
8页	571K
描述
Silicon NPN Triple Diffused Transistor

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2SC5200C-O-AL-N-D 数据手册

2SC5200 ^SERIES

特征曲线 ELECTRICAL CHARACTERISTICS (2SC5200C curves)

DC Current Gain

Base-Emitter Voltage

Tc=100℃

Tc=25℃

Common emitter

Tc=100℃

IC/IB = 5

Common emitter

Single pulse test

V_CE= 5 V Single pulse test

Collector corrent I_C(A)

Saturation Voltage

Common emitter

I_C/I_B= 5

Single pulse test

Tc=100℃

Tc=25℃

Collector corrent I_C(A)

Power Derating

Safe Operating Area

T_C=25℃ DC Operation

1ms

10ms

Infinite heat sink

100ms

Single nonrepetitive pulse Tc = 25°C

Curves must be derated linear

with increase in temperature.

Case temperature T_C（℃）

Collector-emitter voltage V_CE(V)

版本：201603A

6/8

1...3 4 567 8

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