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2SC5065TE85R PDF预览

2SC5065TE85R

更新时间: 2024-11-24 14:48:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
7页 446K
描述
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC5065TE85R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.72
其他特性:LOW NOISE最大集电极电流 (IC):0.015 A
基于收集器的最大容量:0.9 pF集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):80
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz
Base Number Matches:1

2SC5065TE85R 数据手册

 浏览型号2SC5065TE85R的Datasheet PDF文件第2页浏览型号2SC5065TE85R的Datasheet PDF文件第3页浏览型号2SC5065TE85R的Datasheet PDF文件第4页浏览型号2SC5065TE85R的Datasheet PDF文件第5页浏览型号2SC5065TE85R的Datasheet PDF文件第6页浏览型号2SC5065TE85R的Datasheet PDF文件第7页 
2SC5065  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC5065  
VHF to UHF Band Low Noise Amplifier Applications  
Unit: mm  
Low noise figure, high gain.  
NF = 1.1 dB, |S |2 = 12 dB (f = 1 GHz)  
21e  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Base current  
12  
3
15  
V
I
mA  
mA  
mW  
°C  
°C  
B
Collector current  
I
30  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
j
125  
T
stg  
55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
SC-70  
2-2E1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
Weight: 0.006 g (typ.)  
Microwave Characteristics (Ta = 25°C)  
Characteristics  
Transition frequency  
Symbol  
Test Condition  
Min  
5
Typ.  
7
Max  
Unit  
f
V
V
V
V
V
= 5 V, I = 10 mA  
GHz  
T
CE  
CE  
CE  
CE  
CE  
C
S 2 (1)  
= 5 V, I = 10 mA, f = 500 MHz  
8.5  
17  
12  
1
21e  
C
Insertion gain  
Noise figure  
dB  
dB  
S 2 (2)  
= 5 V, I = 10 mA, f = 1 GHz  
21e  
C
NF (1)  
NF (2)  
= 5 V, I = 3 mA, f = 500 MHz  
C
= 5 V, I = 3 mA, f = 1 GHz  
1.1  
2.0  
C
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Emitter cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
1
Unit  
μA  
I
V
V
= 10 V, I = 0  
E
CBO  
CB  
EB  
I
= 1 V, I = 0  
1
μA  
EBO  
C
h
FE  
DC current gain  
V
V
= 5 V, I = 10 mA  
80  
240  
CE  
CB  
C
(Note 1)  
Output capacitance  
C
0.7  
pF  
pF  
ob  
= 5 V, I = 0, f = 1 MHz (Note 2)  
E
Reverse transfer capacitance  
C
0.45  
0.9  
re  
Note 1:  
Note 2:  
h
classification O: 80 to 160, Y: 120 to 240  
FE  
C
is measured by 3 terminal method with capacitance bridge.  
re  
1
2008-12-05  

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