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2SC5066TE85R PDF预览

2SC5066TE85R

更新时间： 2024-09-26 21:09:23
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
7页 447K
描述
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

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中文翻译

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2SC5066TE85R 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.68
其他特性：LOW NOISE最大集电极电流 (IC)：0.015 A
基于收集器的最大容量：0.9 pF集电极-发射极最大电压：12 V
配置：SINGLE最小直流电流增益 (hFE)：80
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：7000 MHz
Base Number Matches：1

2SC5066TE85R 数据手册

 浏览型号2SC5066TE85R的Datasheet PDF文件第2页浏览型号2SC5066TE85R的Datasheet PDF文件第3页浏览型号2SC5066TE85R的Datasheet PDF文件第4页浏览型号2SC5066TE85R的Datasheet PDF文件第5页浏览型号2SC5066TE85R的Datasheet PDF文件第6页浏览型号2SC5066TE85R的Datasheet PDF文件第7页 
2SC5066  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC5066  
VHF~UHF Band Low Noise Amplifier Applications  
Unit: mm  
•
•
Low noise figure, high gain.  
NF = 1.1dB, |S |2 = 12dB (f = 1 GHz)  
21e  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
12  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Base current  
3
V
I
15  
mA  
mA  
mW  
°C  
°C  
B
Collector current  
I
30  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
SC-70  
2-2H1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
Weight: 2.4 mg (typ.)  
Microwave Characteristics (Ta = 25°C)  
Characteristics  
Transition frequency  
Symbol  
Test Condition  
Min  
5
Typ.  
7
Max  
⎯
Unit  
f
V
V
V
V
V
= 5 V, I = 10 mA  
GHz  
T
CE  
CE  
CE  
CE  
CE  
C
⎪S ⎪2 (1)  
= 5 V, I = 10 mA, f = 500 MHz  
⎯
8.5  
⎯
⎯
17  
12  
1
⎯
21e  
C
Insertion gain  
Noise figure  
dB  
dB  
⎪S ⎪2 (2)  
= 5 V, I = 10 mA, f = 1 GHz  
⎯
21e  
C
NF (1)  
NF (2)  
= 5 V, I = 3 mA, f = 500 MHz  
⎯
C
= 5 V, I = 3 mA, f = 1 GHz  
1.1  
2.0  
C
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Emitter cut-off current  
Symbol  
Test Condition  
Min  
⎯
Typ.  
⎯
Max  
1
Unit  
μA  
I
V
V
= 10 V, I = 0  
E
CBO  
CB  
EB  
I
= 1 V, I = 0  
⎯
⎯
1
μA  
EBO  
C
h
FE  
DC current gain  
V
V
= 5 V, I = 10 mA  
80  
⎯
240  
CE  
CB  
C
(Note 1)  
Output capacitance  
C
⎯
⎯
0.7  
⎯
pF  
pF  
ob  
= 5 V, I = 0, f = 1 MHz (Note 2)  
E
Reverse transfer capacitance  
C
0.45  
0.9  
re  
Note 1:  
Note 2:  
h
classification O: 80~160, Y: 120~240  
FE  
C
is measured by 3 terminal method with capacitance bridge.  
re  
1
2007-11-01  
1234567

中文翻译

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