Datasheet > 2SC5066Y

2SC5066Y

更新时间： 2024-09-25 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	109K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SC-70

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2SC5066Y 数据手册

Ordering number:EN4509

NPN Epitaxial Planar Silicon Transistor

2SC5069

Low-Frequency General-Purpose Amplifier,

Driver Applications

Features

Package Dimensions

unit:mm

· High current capacity.

· Adoption of MBIT process.

· High DC current gain.

2038A

[2SC5069]

· Low collector-to-emitter saturation voltage.

· High V

4.5

1.6

1.5

EBO

0.4

0.5

0.4

1.5

3.0

1 : Base

0.75

2 : Collector

3 : Emitter

SANYO : PCP

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

Base Current

0.4

1.5

150

Mounted on ceramic board (250mm²× 0.8mm)

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

Parameter

Symbol

Conditions

Unit

min

typ

max

100

Collector Cutoff Current

=20V, I =0

CBO

Emitter Cutoff Current

DC Current Gain

=10V, I =0

100

EBO

=5V, I =500mA

=5V, I =1A

=10V, I =50mA

=10V, f=1MHz

800

600

1500

3200

Gain-Bandwidth Product

Output Capacitance

260

MHz

Cob

Marking :CU

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

12599HA (KT)/42894MT (KOTO) BX-0115 No.4509–1/4

12 3 4

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与2SC5066Y相关器件

型号	品牌	获取价格	描述	数据表
2SC5066-Y	TOSHIBA	获取价格	VHF~UHF Band Low Noise Amplifier Applications
2SC5066Y(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,30MA I(C),SC-70
2SC5066-Y,LF(B	TOSHIBA	获取价格	RF Small Signal Bipolar Transistor
2SC5066-YTE85L	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
2SC5066-YTE85R	TOSHIBA	获取价格	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
2SC5069	TYSEMI	获取价格	High current capacity. Adoption of MBIT process. High DC current gain.
2SC5069	SANYO	获取价格	Low-Frequency General-Purpose Amp, Driver Applications
2SC5069	KEXIN	获取价格	NPN Epitaxial Planar Silicon Transistor
2SC507	ETC	获取价格	High Voltage Transistors
2SC5070	SANYO	获取价格	Low-Frequency General-Purpose Amp, Driver Applications

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