2SC5066
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5066
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
•
•
Low noise figure, high gain.
NF = 1.1dB, |S |2 = 12dB (f = 1 GHz)
21e
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
20
12
V
V
Collector-emitter voltage
Emitter-base voltage
Base current
3
V
I
15
mA
mA
mW
°C
°C
B
Collector current
I
30
C
Collector power dissipation
Junction temperature
Storage temperature range
P
100
125
−55~125
C
T
j
T
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
SC-70
2-2H1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
TOSHIBA
Weight: 2.4 mg (typ.)
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Symbol
Test Condition
Min
5
Typ.
7
Max
⎯
Unit
f
V
V
V
V
V
= 5 V, I = 10 mA
GHz
T
CE
CE
CE
CE
CE
C
⎪S ⎪2 (1)
= 5 V, I = 10 mA, f = 500 MHz
⎯
8.5
⎯
⎯
17
12
1
⎯
21e
C
Insertion gain
Noise figure
dB
dB
⎪S ⎪2 (2)
= 5 V, I = 10 mA, f = 1 GHz
⎯
21e
C
NF (1)
NF (2)
= 5 V, I = 3 mA, f = 500 MHz
⎯
C
= 5 V, I = 3 mA, f = 1 GHz
1.1
2.0
C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
Test Condition
Min
⎯
Typ.
⎯
Max
1
Unit
μA
I
V
V
= 10 V, I = 0
E
CBO
CB
EB
I
= 1 V, I = 0
⎯
⎯
1
μA
EBO
C
h
FE
DC current gain
V
V
= 5 V, I = 10 mA
80
⎯
240
CE
CB
C
(Note 1)
Output capacitance
C
⎯
⎯
0.7
⎯
pF
pF
ob
= 5 V, I = 0, f = 1 MHz (Note 2)
E
Reverse transfer capacitance
C
0.45
0.9
re
Note 1:
Note 2:
h
classification O: 80~160, Y: 120~240
FE
C
is measured by 3 terminal method with capacitance bridge.
re
1
2007-11-01