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2SC4915-R PDF预览

2SC4915-R

更新时间： 2024-11-06 12:55:47
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器
页数 文件大小 规格书
5页 291K
描述
High Frequency Amplifier Applications

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2SC4915-R 数据手册

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2SC4915  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC4915  
High Frequency Amplifier Applications  
Unit: mm  
FM, RF, MIX, If Amplifier Applications  
•
•
Small reverse transfer capacitance: C = 0.55 pF (typ.)  
re  
Low noise figure: NF = 2.3dB (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
4
V
I
20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
4
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
JEDEC  
JEITA  
―
―
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
TOSHIBA  
2-2H1A  
Weight: 2.4 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 40 V, I = 0 A  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.5  
μA  
μA  
CBO  
CB  
EB  
E
I
= 4 V, I = 0 A  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= 6 V, I = 1 mA  
40  
⎯
200  
CE  
C
Reverse transfer capacitance  
Transition frequency  
Collector-base time constant  
Noise figure  
C
V
V
V
= 6 V, f = 1 MHz  
⎯
260  
⎯
0.55  
550  
⎯
⎯
⎯
pF  
MHz  
ps  
re  
CB  
CE  
CE  
f
= 6 V, I = 1 mA  
C
T
C ･rbb’  
c
= 6 V, I = −1 mA, f = 30 MHz  
20  
5.0  
⎯
E
NF  
⎯
2.3  
23  
dB  
V
= 6 V, I = −1 mA,  
E
CC  
f = 100 MHz, Figure 1  
Power gain  
G
17  
dB  
pe  
Note: h classification R: 40~80, O: 70~140, Y: 100~200  
FE  
1
2007-11-01  
12345

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