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2SC4915RTE85R PDF预览

2SC4915RTE85R

更新时间： 2024-11-06 15:42:31
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
5页 280K
描述
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

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中文翻译

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2SC4915RTE85R 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknown风险等级：5.68
最大集电极电流 (IC)：0.02 A集电极-发射极最大电压：30 V
配置：SINGLE最小直流电流增益 (hFE)：40
最高频带：VERY HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最小功率增益 (Gp)：17 dB
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：550 MHzBase Number Matches：1

2SC4915RTE85R 数据手册

 浏览型号2SC4915RTE85R的Datasheet PDF文件第2页浏览型号2SC4915RTE85R的Datasheet PDF文件第3页浏览型号2SC4915RTE85R的Datasheet PDF文件第4页浏览型号2SC4915RTE85R的Datasheet PDF文件第5页 
2SC4915  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC4915  
High Frequency Amplifier Applications  
Unit: mm  
FM, RF, MIX, If Amplifier Applications  
•
•
Small reverse transfer capacitance: C = 0.55 pF (typ.)  
re  
Low noise figure: NF = 2.3dB (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
4
V
I
20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
4
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
JEDEC  
JEITA  
―
―
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
TOSHIBA  
2-2H1A  
Weight: 2.4 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 40 V, I = 0 A  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.5  
μA  
μA  
CBO  
CB  
EB  
E
I
= 4 V, I = 0 A  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= 6 V, I = 1 mA  
40  
⎯
200  
CE  
C
Reverse transfer capacitance  
Transition frequency  
Collector-base time constant  
Noise figure  
C
V
V
V
= 6 V, f = 1 MHz  
⎯
260  
⎯
0.55  
550  
⎯
⎯
⎯
pF  
MHz  
ps  
re  
CB  
CE  
CE  
f
= 6 V, I = 1 mA  
C
T
C ･rbb’  
c
= 6 V, I = −1 mA, f = 30 MHz  
20  
5.0  
⎯
E
NF  
⎯
2.3  
23  
dB  
V
= 6 V, I = −1 mA,  
E
CC  
f = 100 MHz, Figure 1  
Power gain  
G
17  
dB  
pe  
Note: h classification R: 40~80, O: 70~140, Y: 100~200  
FE  
1
2007-11-01  
12345

中文翻译

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