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2SC4915R(TE85L) PDF预览

2SC4915R(TE85L)

更新时间： 2024-09-15 15:25:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 285K
描述
TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416

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2SC4915R(TE85L) 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.69最大集电极电流 (IC)：0.02 A
配置：Single最小直流电流增益 (hFE)：40
最高工作温度：125 °C极性/信道类型：NPN
最大功率耗散 (Abs)：0.1 W子类别：Other Transistors
表面贴装：YES标称过渡频率 (fT)：260 MHz
Base Number Matches：1

2SC4915R(TE85L) 数据手册

 浏览型号2SC4915R(TE85L)的Datasheet PDF文件第2页浏览型号2SC4915R(TE85L)的Datasheet PDF文件第3页浏览型号2SC4915R(TE85L)的Datasheet PDF文件第4页浏览型号2SC4915R(TE85L)的Datasheet PDF文件第5页 
2SC4915  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC4915  
High Frequency Amplifier Applications  
Unit: mm  
FM, RF, MIX, If Amplifier Applications  
•
•
Small reverse transfer capacitance: C = 0.55 pF (typ.)  
re  
Low noise figure: NF = 2.3dB (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
4
V
I
20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
4
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
−55~125  
C
T
j
JEDEC  
JEITA  
―
―
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
TOSHIBA  
2-2H1A  
Weight: 2.4 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 40 V, I = 0 A  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.5  
μA  
μA  
CBO  
CB  
EB  
E
I
= 4 V, I = 0 A  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= 6 V, I = 1 mA  
40  
⎯
200  
CE  
C
Reverse transfer capacitance  
Transition frequency  
Collector-base time constant  
Noise figure  
C
V
V
V
= 6 V, f = 1 MHz  
⎯
260  
⎯
0.55  
550  
⎯
⎯
⎯
pF  
MHz  
ps  
re  
CB  
CE  
CE  
f
= 6 V, I = 1 mA  
C
T
C ･rbb’  
c
= 6 V, I = −1 mA, f = 30 MHz  
20  
5.0  
⎯
E
NF  
⎯
2.3  
23  
dB  
V
= 6 V, I = −1 mA,  
E
CC  
f = 100 MHz, Figure 1  
Power gain  
G
17  
dB  
pe  
Note: h classification R: 40~80, O: 70~140, Y: 100~200  
FE  
1
2007-11-01  
12345

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