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2SC4726_10

更新时间： 2024-10-27 12:56:19
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罗姆 - ROHM 晶体放大器晶体管
页数 文件大小 规格书
3页 153K
描述
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)

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2SC4726_10 数据手册

 浏览型号2SC4726_10的Datasheet PDF文件第2页浏览型号2SC4726_10的Datasheet PDF文件第3页 
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)  
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K  
Features  
Dimensions (Unit : mm)  
1) High transition frequency. (Typ. fT= 3.2GHz)  
2) Small rbb’Cc and high gain. (Typ. 4ps)  
3) Small NF.  
2SC5662  
1.2  
0.32  
(3)  
( )( )  
1 2  
0.22  
0.13  
0.4 0.4  
0.8  
0.5  
(1) Base  
(2) Emitter  
(3) Collector  
ROHM : VMT3  
2SC4726  
Packaging specifications and hFE  
Type  
2SC4726  
EMT3  
NP  
2SC4083  
UMT3  
NP  
2SC3838K  
SMT3  
NP  
2SC5662  
VMT3  
NP  
0.7  
0.55  
1.6  
0.3  
Package  
hFE  
( )  
3
AD  
AD  
1D  
AD  
Marking  
Code  
(
)
( )  
1
2
0.2  
0.2  
T2L  
TL  
T106  
T146  
0.15  
0.5 0.5  
1.0  
Basic ordering unit  
(pieces)  
(1) Emitter  
(2) Base  
(3) Collector  
8000  
3000  
3000  
3000  
ROHM : EMT3  
EIAJ : SC-75A  
2.0  
0.9  
0.7  
2SC4083  
0.2  
0.3  
(
)
3
Absolute maximum ratings (Ta=25C)  
(
)
( )  
1
2
Parameter  
Symbol  
Limits  
Unit  
V
(1) Emitter  
(2) Base  
(3) Collector  
0.650.65  
1.3  
0.15  
Collector-base voltage  
V
V
V
CBO  
20  
ROHM : UMT3  
EIAJ : SC-70  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CEO  
EBO  
11  
V
Each lead has same dimensions  
3
50  
V
2.9  
1.1  
0.8  
2SC3838K  
I
C
mA  
0.4  
2SC5662, 2SC4726  
2SC4083, 2SC3838K  
0.15  
Collector power  
dissipation  
P
C
W
( )  
3
0.2  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
−55 to +150  
(
)
( )  
1
2
(1) Emitter  
(2) Base  
(3) Collector  
0.95 0.95  
1.9  
0.15  
ROHM : SMT3  
EIAJ : SC-59  
Each lead has same dimensions  
Absolute maximum ratings (Ta=25C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
20  
11  
3
−
−
−
−
−
−
−
−
−
0.5  
0.5  
0.5  
V
V
I
I
I
C
=
=
10μA  
1mA  
C
V
E
=
10μA  
I
CBO  
EBO  
CE(sat)  
−
−
−
μA  
μA  
V
V
CB  
=
=
10V  
Emitter cutoff current  
I
V
EB  
2V  
Collector-emitter saturation voltage  
V
I
C
/I  
B
=
10mA/5mA  
DC current  
transfer ratio  
2SC5662, 2SC4726,  
2SC4083, 2SC3838K  
hFE  
56  
−
180  
−
VCE/IC = 10V/5mA  
f
T
1.4  
−
−
3.2  
0.8  
4
−
1.5  
12  
−
GHz  
pF  
VCE  
VCB  
VCB  
VCE  
=
10V , I  
10V , I  
10V , I  
E
E
C
= −10mA , f  
=
500MHz  
1MHz  
10mA , f 31.8MHz  
500MHz , Rg = 50Ω  
Transition frequency  
Output capacitance  
Collector-base time constant  
Noise factor  
Cob  
Cc  
NF  
=
=
=
0A , f =  
r
bb'  
⋅
ps  
=
=
=
−
3.5  
dB  
6V , I  
C
=
2mA , f  
=
This product might cause chip aging and breakdown under the large electrified environment.  
Please consider to design ESD protection circuit.  
www.rohm.com  
2010.01 - Rev.D  
1/2  
c
○ 2010 ROHM Co., Ltd. All rights reserved.  
123

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