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2SC4726TL/PQ PDF预览

2SC4726TL/PQ

更新时间: 2024-10-27 13:02:31
品牌 Logo 应用领域
罗姆 - ROHM 晶体放大器晶体管
页数 文件大小 规格书
3页 69K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

2SC4726TL/PQ 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.56Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.05 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:11 V
配置:SINGLE最小直流电流增益 (hFE):82
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):3200 MHzBase Number Matches:1

2SC4726TL/PQ 数据手册

 浏览型号2SC4726TL/PQ的Datasheet PDF文件第2页浏览型号2SC4726TL/PQ的Datasheet PDF文件第3页 
2SC5662 / 2SC4726 /  
2SC4083 /2SC3838K  
Transistors  
High-Frequency Amplifier Transistor  
(11V, 50mA, 3.2GHz)  
2SC5662 / 2SC4726 /  
2SC4083 / 2SC3838K  
zExternal dimensions (Unit : mm)  
zFeatures  
1) High transition frequency. (Typ. f  
T= 3.2GHz)  
2SC5662  
2) Small rbb’Cc and high gain. (Typ. 4ps)  
1.2  
0.32  
3) Small NF.  
(3)  
( )( )  
1 2  
0.22  
0.13  
0.4 0.4  
0.8  
(1) Base  
(2) Emitter  
(3) Collector  
0.5  
zPackaging specifications and hFE  
ROHM : VMT3  
2SC4726  
Type  
2SC4726  
EMT3  
NP  
2SC4083  
UMT3  
NP  
2SC3838K  
SMT3  
NP  
2SC5662  
VMT3  
NP  
Package  
0.7  
1.6  
hFE  
0.55  
0.3  
AD  
AD  
1D  
AD  
Marking  
Code  
( )  
3
T2L  
TL  
T106  
T146  
Basic ordering unit  
(pieces)  
(
)
( )  
1
2
8000  
3000  
3000  
3000  
0.2  
0.2  
0.15  
0.5 0.5  
1.0  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : EMT3  
EIAJ : SC-75A  
zAbsolute maximum ratings (Ta=25°C)  
2SC4083  
2.0  
0.9  
0.7  
Parameter  
Collector-base voltage  
Symbol  
Limits  
Unit  
V
0.2  
0.3  
V
V
V
CBO  
CEO  
EBO  
20  
(
)
3
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
11  
V
3
50  
V
I
C
mA  
(
)
2
( )  
1
(1) Emitter  
(2) Base  
(3) Collector  
2SC5662, 2SC4726  
2SC4083, 2SC3838K  
0.15  
Collector power  
dissipation  
PC  
W
0.650.65  
1.3  
0.2  
0.15  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
ROHM : UMT3  
EIAJ : SC-70  
Each lead has same dimensions  
Tstg  
55 to +150  
2.9  
1.1  
0.8  
2SC3838K  
0.4  
( )  
3
(
)
( )  
1
2
(1) Emitter  
(2) Base  
(3) Collector  
0.95 0.95  
1.9  
0.15  
ROHM : SMT3  
EIAJ : SC-59  
Each lead has same dimensions  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
20  
11  
3
0.5  
0.5  
0.5  
V
V
I
I
I
C
C
=
=
10µA  
1mA  
V
E
=
10µA  
I
CBO  
EBO  
CE(sat)  
µA  
µA  
V
V
CB  
=
=
10V  
2V  
Emitter cutoff current  
I
V
EB  
Collector-emitter saturation voltage  
V
I
C/I  
B
=
10mA/5mA  
DC current  
transfer ratio  
2SC5662, 2SC4726,  
2SC4083, 2SC3838K  
hFE  
56  
180  
V
CE/IC = 10V/5mA  
f
T
1.4  
3.2  
0.8  
4
1.5  
12  
GHz  
pF  
VCE  
VCB  
VCB  
VCE  
=
10V , I  
10V , I  
10V , I  
E
E
C
= 10mA , f  
=
500MHz  
Transition frequency  
Output capacitance  
Collector-base time constant  
Noise factor  
Cob  
Cc  
NF  
=
=
=
0A , f  
=
1MHz  
r
bb'  
ps  
=
=
10mA , f  
=
31.8MHz  
3.5  
dB  
6V , I  
C
=
2mA , f  
=
500MHz , Rg = 50Ω  
Rev.B  
1/2  

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