2SC4715R

更新时间： 2024-10-26 13:04:19

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松下 - PANASONIC		/
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中文翻译

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2SC4715R 数据手册

Transistor

2SC4715

Silicon NPN epitaxial planer type

For low-frequency high breakdown voltage amplification

Unit: mm

4.0±0.2

Features

■

●

Satisfactory linearity of forward current transfer ratio h_FE

●

High collector to emitter voltage V_CEO

Small collector output capacitance C_ob.

marking

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

150

1.27 1.27

2.54±0.15

100

˚C

1:Emitter

2:Collector

3:Base

I_C

EIAJ:SC–72

New S Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

V_CB= 100V, I_E= 0

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= 100µA, I_B= 0

150

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 5V, I_C= 10mA

I_C= 30mA, I_B= 3mA

V_CB= 10V, I_E= 0, f = 1MHz

130

330

Collector to emitter saturation voltage V_CE(sat)

Collector output capacitance

Transition frequency

C_ob

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CE= 10V, I_C= 1mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

160

150

MHz

Noise voltage

Rank classification

Rank

h_FE

130 ~ 220

185 ~ 330

中文翻译

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与2SC4715R相关器件

型号	品牌	获取价格	描述	数据表
2SC4715S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1
2SC4715T	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1
2SC4718	ROHM	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC4718C	ROHM	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC4718C7	ROHM	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC4718C7C	ROHM	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC4718C7D	ROHM	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC4718C7E	ROHM	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SC4718D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 100MA I(C) \| SOT-186
2SC4718E	ROHM	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla