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2SC4715R PDF预览

2SC4715R

更新时间: 2024-10-26 13:04:19
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松下 - PANASONIC /
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2SC4715R 数据手册

 浏览型号2SC4715R的Datasheet PDF文件第2页 
Transistor  
2SC4715  
Silicon NPN epitaxial planer type  
For low-frequency high breakdown voltage amplification  
Unit: mm  
4.0±0.2  
Features  
Satisfactory linearity of forward current transfer ratio hFE  
.
High collector to emitter voltage VCEO  
Small collector output capacitance Cob.  
.
marking  
Absolute Maximum Ratings (Ta=25˚C)  
1
2
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
150  
150  
1.27 1.27  
V
2.54±0.15  
5
V
100  
mA  
mA  
mW  
˚C  
1:Emitter  
2:Collector  
3:Base  
IC  
50  
EIAJ:SC–72  
New S Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
300  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
VCB = 100V, IE = 0  
1
Collector to emitter voltage  
Emitter to base voltage  
VCEO  
VEBO  
IC = 100µA, IB = 0  
150  
5
IE = 10µA, IC = 0  
V
*1  
Forward current transfer ratio  
hFE  
VCE = 5V, IC = 10mA  
IC = 30mA, IB = 3mA  
VCB = 10V, IE = 0, f = 1MHz  
130  
330  
1
Collector to emitter saturation voltage VCE(sat)  
V
pF  
Collector output capacitance  
Transition frequency  
Cob  
fT  
3
VCB = 10V, IE = –10mA, f = 200MHz  
VCE = 10V, IC = 1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
160  
150  
MHz  
Noise voltage  
NV  
mV  
*1  
h
Rank classification  
FE  
Rank  
hFE  
R
S
130 ~ 220  
185 ~ 330  
1

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