生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 260 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 160 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4718 | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7 | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7C | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7D | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7E | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718D | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | SOT-186 | |
2SC4718E | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4719 | ROHM |
获取价格 |
TRANSISTORS TO 92L TO-92LS MRT | |
2SC4719/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO |