是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220FP | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 10 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4718C | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7 | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7C | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7D | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718C7E | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4718D | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | SOT-186 | |
2SC4718E | ROHM |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC4719 | ROHM |
获取价格 |
TRANSISTORS TO 92L TO-92LS MRT | |
2SC4719/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO | |
2SC4719/PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO |