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2SC4689_04 PDF预览

2SC4689_04

更新时间: 2024-10-26 07:31:03
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
4页 121K
描述
Power Amplifier Applications

2SC4689_04 数据手册

 浏览型号2SC4689_04的Datasheet PDF文件第2页浏览型号2SC4689_04的Datasheet PDF文件第3页浏览型号2SC4689_04的Datasheet PDF文件第4页 
2SC4689  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC4689  
Power Amplifier Applications  
Unit: mm  
Complementary to 2SA1804  
Suitable for use in 55-W high fidelity audio amplifier’s output stage.  
Maximum Ratings  
(Tc = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
120  
120  
5
V
V
V
DC  
I
8
C
Collector current  
A
A
Pulse  
I
16  
0.8  
CP  
Base current  
I
B
Collector power dissipation  
(Tc = 25°C)  
P
70  
W
C
JEDEC  
JEITA  
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
T
stg  
55 to 150  
TOSHIBA  
2-16F1A  
Weight: 5.8 g (typ.)  
Electrical Characteristics  
(Tc = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 120 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
5.0  
5.0  
µA  
µA  
V
CBO  
CB  
E
Emitter cut-off current  
= 5 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
V
I
C
= 50 mA, I = 0  
120  
(BR) CEO  
B
h
FE (1)  
V
CE  
= 5 V, I = 1 A  
55  
160  
C
DC current gain  
(Note)  
h
V
= 5 V, I = 4 A  
35  
75  
0.35  
0.95  
30  
2.0  
1.5  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
C
= 6 A, I = 0.6 A  
V
V
CE (sat)  
B
V
BE  
V
CE  
V
CE  
V
CB  
= 5 V, I = 4 A  
C
Transition frequency  
f
= 5 V, I = 1 A  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
190  
E
Note: h  
FE (1)  
classification R: 55 to 110, O: 80 to 160  
1
2004-07-07  

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