Datasheet > 2SC4689_04

2SC4689_04

更新时间： 2024-10-26 07:31:03

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	121K
描述
Power Amplifier Applications

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中文翻译

获取价格

数据手册

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2SC4689_04 数据手册

2SC4689

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC4689

Power Amplifier Applications

Unit: mm

•

Complementary to 2SA1804

Suitable for use in 55-W high fidelity audio amplifier’s output stage.

Maximum Ratings

(Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

120

Collector current

Pulse

0.8

Base current

Collector power dissipation

(Tc = 25°C)

JEDEC

JEITA

―

Junction temperature

Storage temperature range

150

°C

stg

−55 to 150

TOSHIBA

2-16F1A

Weight: 5.8 g (typ.)

Electrical Characteristics

(Tc = 25°C)

Characteristics

Symbol

Test Condition

= 120 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

5.0

―

µA

CBO

Emitter cut-off current

= 5 V, I = 0

EBO

Collector-emitter breakdown voltage

= 50 mA, I = 0

120

(BR) CEO

FE (1)

= 5 V, I = 1 A

―

160

DC current gain

(Note)

= 5 V, I = 4 A

―

0.35

0.95

―

2.0

1.5

―

FE (2)

Collector-emitter saturation voltage

Base-emitter voltage

= 6 A, I = 0.6 A

CE (sat)

= 5 V, I = 4 A

Transition frequency

= 5 V, I = 1 A

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

190

―

Note: h

FE (1)

classification R: 55 to 110, O: 80 to 160

2004-07-07

12 3 4

中文翻译

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