Datasheet > 2SC4667-R(TE85L)

2SC4667-R(TE85L)

更新时间： 2024-11-25 08:10:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	213K
描述
TRANSISTOR,BJT,NPN,15V V(BR)CEO,200MA I(C),SC-70

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数据手册

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2SC4667-R(TE85L) 数据手册

2SC4667

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4667

Ultra High Speed Switching Applications

Unit: mm

Computer, Counter Applications

•

High transition frequency: f = 400 MHz (typ.)

Low saturation voltage: V

= 0.3 V (max)

= 15 ns (typ.)

CE (sat)

High speed switching time: t

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

200

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

−55~125

JEDEC

JEITA

―

stg

SC-70

2-2E1A

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 0.006 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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