WILLAS
2SC4672
SOT-89 Plastic-Encapsulate Transistors
SOT-89
TRANSISTOR (NPN)
FEATURES
z
z
z
z
Low Saturation Voltage
1. BASE
Excellent hFE Characteristics
Complements the 2SA1797
2. COLLECTOR
3. EMITTER
Pb-Free package is available
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
60
50
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
250
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
60
50
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=50µA,IE=0
IC=1mA,IB=0
V
IE=50µA,IC=0
V
VCB=60V,IE=0
0.1
0.1
µA
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=2V, IC=500mA
IC=1A,IB=50mA
VCE=2V,IC=0.5A, f=100MHz
VCB=10V, IE=0, f=1MHz
82
390
0.35
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
210
25
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82–180
120–270
DKQ
180–390
DKR
MARKING
DKP
2012-10
WILLAS ELECTRONIC CORP.