Datasheet > 2SC4672_10

2SC4672_10

更新时间： 2024-01-23 08:49:32

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	271K
描述
NPN Plastic-Encapsulate Transistor

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2SC4672_10 数据手册

2SC4672

500 mW, 60 V

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-89

FEATURES



Low saturation voltage, typically V_CE(SAT)=0.1V at I_C/I_B=1A/50mA.

Excellent DC current gain characteristics.

Complements the 2SA1797

Collector





Base



Emitter

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

4.40

3.94

1.40

2.30

4.60

4.25

1.60

2.60

0.40

1.50 TYP

3.00 TYP

0.32

0.35

0.58

0.52

0.44

1.50

0.89

1.70

1.20

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector to Base Voltage

SYMBOL

V_CBO

RATING

UNIT

Collector to Emitter Voltage

Emitter to Base Voltage

V_CEO

V_EBO

Continuous Collector Current

Collector Power Dissipation

Junction, Storage Temperature

I_C

P_C

500

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

SYMBOL MIN

TYP

MAX UNIT

TEST CONDITION

I_C=50μA, I_E= 0

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_B= 0

I_E=50μA, I_C= 0

V_CB=60 V, I_E= 0

V_EB=5 V, I_C= 0

V_CE=2V, I_C=0.5A

I_C=1A, I_B=50mA

0.1

270

0.35

μA

Emitter Cut-Off Current

I_EBO

DC Current Gain

h_FE

Collector to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

f_T

210

MHz V_CE= 2V, I_C= 500mA, f = 100 MHz

Collector Output Capacitance

C_ob

V_CB= 10V, I_E= 0 , f=1MHz

CLASSIFICATION OF h_FE

Rank

Range

Marking

82~180

DKP

120~270

DKQ

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

09-Mar-2010 Rev. B

Page 1 of 2

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