Datasheet > 2SC4672Q

2SC4672Q

更新时间： 2024-01-14 06:12:34

品牌	Logo	应用领域
江苏长电/长晶 - CJ		放大器晶体管
页数	文件大小	规格书
2页	238K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SC4672Q 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SC4672Q 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC4672 TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Low Saturation Voltage

Excellent h_FECharacteristics

Complements the 2SA1797

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

250

150

-55~+150

℃/W

℃

R_θJA

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=50µA,I_E=0

I_C=1mA,I_B=0

I_E=50µA,I_C=0

V_CB=60V,I_E=0

0.1

µA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=2V, I_C=500mA

I_C=1A,I_B=50mA

VCE=2V,IC=0.5A, f=100MHz

V_CB=10V, I_E=0, f=1MHz

390

0.35

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

210

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

82–180

120–270

DKQ

180–390

DKR

MARKING

DKP

A,Feb,2011

中文翻译

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2-SC4672-Q	MCC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMA
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2SC4672-Q-T	MCC	获取价格	暂无描述
2SC4672R	CJ	获取价格	Transistor
2SC4672-R	KEXIN	获取价格	NPN Transistors
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2SC4672-R	YANGJIE	获取价格	SOT-89
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