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2SC4672

更新时间: 2024-11-24 07:31:03
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
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描述
Low Frequency Transistor

2SC4672 数据手册

  
SMD Type  
Transistors  
Low Frequency Transistor  
2SC4672  
Features  
Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA.  
Excellent DC current gain characteristics.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
Rating  
Unit  
V
60  
Collector-emitter voltage  
Emitter-base voltage  
VCEO  
50  
V
VEBO  
6
V
IC  
3
A
Collector current  
IC (Pulse) *1  
6
A
PC  
0.5  
2
W
W
Collector power dissipation  
2
PC  
Tj  
*
Junction temperature  
Storage temperature  
150  
Tstg  
-55 to +150  
*1. Single pulse, Pw=10ms  
*2. 40X40Xt 0.7mm Ceramic board  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Testconditons  
Min  
60  
50  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
IC=50ìA  
IC=1mA  
IE=50ìA  
VCB=60V  
VEB=5V  
V
V
0.1  
0.1  
390  
A
Emitter cutoff current  
IEBO  
A
VCE=2V,IC=0.5A  
VCE=2V,IC=1.5A  
82  
45  
DC current gain  
hFE  
Collector-emitter saturation voltage  
Output capacitance  
VCE(sat) IC=1A,IB=50mA  
0.13 0.35  
V
Cob  
fT  
VCB=10V, IE=0A, f=1MHz  
25  
pF  
Transition frequency  
VCE=2V, IE= -0.5A, f=100MHz  
210  
MHz  
hFE Classification  
Marking  
Rank  
hFE  
DKP  
P
DKQ  
Q
DKR  
R
82 180  
120 270  
180 390  
1
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