Datasheet > 2SC4614R-AN

2SC4614R-AN

更新时间： 2024-11-11 14:48:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	60K
描述
TRANSISTOR,BJT,NPN,160V V(BR)CEO,1.5A I(C),SC-71

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2SC4614R-AN 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SC4614R-AN 数据手册

Ordering number:ENN3578

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1770/2SC4614

High-Voltage Switching Applications

Features

Package Dimensions

unit:mm

· Adoption of MBIT process.

· High breakdown voltage and large current capacity.

2064A

[2SA1770/2SC4614]

2.5

1.45

1.0

6.9

0.6

0.9

0.5

0.45

1 : Emitter

2 : Collector

3 : Base

SANYO : NMP

( ) : 2SA1770

2.54

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

(–)180

(–)160

(–)6

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)1.5

(–)2.5

Colletor Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

(–)1

Collector Cutoff Current

=(–)120V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

(–)1

EBO

=(–)5V, I =(–)100mA

100*

400*

=(–)5V, I =(–)10mA

Gain-Bandwidth Product

=(–)10V, I =(–)50mA

120

MHz

* ; The 2SA1770/2SC4614 are classified by 100mA h as follows :

Continued on next page.

Rank

100 to 200 140 to 280 200 to 400

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

90503TN (KT)/83198HA (KT)/6040TA (CQ) No.3578–1/4

12 3 4

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与2SC4614R-AN相关器件

型号	品牌	获取价格	描述	数据表
2SC4614S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1.5A I(C) \| SPAK
2SC4614S-AN	ONSEMI	获取价格	Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP
2SC4614T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1.5A I(C) \| SPAK
2SC4614T-AN	ONSEMI	获取价格	Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP
2SC4615	SANYO	获取价格	High Voltage Driver Applications
2SC4615	KEXIN	获取价格	Silicon NPN Triple Diffused Type Transistor
2SC4615	TYSEMI	获取价格	Large current calcity (IC=1A) High blocking voltage(VCEO 400V)
2SC4615C(TP-FA)	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-252VAR
2SC4615CTP-FA	ONSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4
2SC4615D(TP)	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,1A I(C),TO-251VAR

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