Datasheet > 2SC4390

2SC4390

更新时间： 2024-11-24 06:24:27

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	57K
描述
NPN Epitaxial Planar Silicon Transistor

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中文翻译

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数据手册

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2SC4390 数据手册

SMD Type

Transistors

NPN Epitaxial Planar Silicon Transistor

2SC4390

Features

Adoption of MBIT process.

High DC current gain (hFE=800 to 3200).

Large current capacity (IC=2A).

Low collector-to-emitter saturation voltage

(V^CE(sat)0.3V).

High VEBO (VEBO 15V).

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current (pulse)

Base current

I^CP

0.4

I^B

Collector dissipation

Junction temperature

Storage temperature

P^C

500

T^j

150

Tstg

-55 to +150

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