2SC4391S PDF预览

2SC4391S

更新时间: 2025-09-05 23:20:19
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 51K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SIP

2SC4391S 数据手册

 浏览型号2SC4391S的Datasheet PDF文件第2页浏览型号2SC4391S的Datasheet PDF文件第3页 
Transistor  
2SC4391  
Silicon NPN epitaxial planer type  
For low-frequency output amplification  
Complementary to 2SA1674  
Unit: mm  
2.5±0.1  
1.05  
±0.05  
6.9±0.1  
4.0  
(1.45)  
0.8  
0.7  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
High collector to emitter voltage VCEO  
Allowing supply with the radial taping.  
.
0.65 max.  
0.45+00..015  
Absolute Maximum Ratings (Ta=25˚C)  
2.5±0.5 2.5±0.5  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
1
2
3
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
80  
V
5
V
Note: In addition to the  
lead type shown in  
1:Emitter  
2:Collector  
1.5  
A
the upper figure, the 3:Base  
IC  
1
A
type as shown in  
the lower figure is  
also available.  
MT2 Type Package  
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
1.2±0.1  
0.65  
max.  
+
0.1  
0.45–0.05  
(HW type)  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
CB = 40V, IE = 0  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
V
0.1  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
80  
80  
5
IC = 1mA, IB = 0  
V
IE = 10µA, IC = 0  
V
*1  
hFE1  
hFE2  
VCE = 2V, IC = 100mA  
VCE = 2V, IC = 500mA*2  
IC = 500mA, IB = 50mA*2  
IC = 500mA, IB = 50mA*2  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
120  
60  
340  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
0.15  
0.85  
120  
10  
0.3  
1.2  
V
V
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
20  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
R
S
120 ~ 240  
170 ~ 340  
1

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