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2SC4399

更新时间: 2024-09-21 06:23:27
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 46K
描述
NPN Epitaxial Planar Silicon Transistor

2SC4399 数据手册

  
SMD Type  
Transistors  
NPN Epitaxial Planar Silicon Transistor  
2SC4399  
Features  
High power gain : PG=25dB typ (f=100MHz).  
applied sets to be made small and slim.  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
30  
20  
V
5
30  
V
mA  
mW  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
Testconditons  
VCB = 10V, IE=0  
Min  
Typ  
Max  
0.1  
Unit  
ìA  
ICBO  
IEBO  
hFE  
fT  
VEB = 4V, IC=0  
0.1  
ìA  
VCE = 6V , IC = 1mA  
VCE = 6V , IC = 1mA  
VCB = 6V, f = 1MHz  
60  
270  
Gain bandwidth product  
Reverse transfer capacitance  
Base-collector time constant  
Power gain  
200  
320  
0.9  
12  
MHz  
pF  
Cre  
1.2  
20  
rbb'Cc VCB = 6V, IC= 1mA, f = 31.9MHz  
ps  
PG  
NF  
VCB = 6V, IC= 1mA, f = 100MHz  
VCB = 6V, IC= 1mA, f = 100MHz  
25  
dB  
dB  
Noise figure  
3.0  
hFE Classification  
F
Marking  
Rank  
3
4
5
hFE  
60 120  
90 180  
135 270  
1
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