2SC4391

更新时间： 2024-02-15 03:40:13

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	42K
描述
Silicon NPN epitaxial planer type(For low-frequency output amplification)

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技术参数
数据手册

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2SC4391 技术参数

生命周期：	Obsolete	包装说明：	IN-LINE, R-PSIP-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.84
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	80 V
配置：	SINGLE	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PSIP-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

2SC4391 数据手册

Transistor

2SC4391

Silicon NPN epitaxial planer type

For low-frequency output amplification

Complementary to 2SA1674

Unit: mm

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

High collector to emitter voltage V_CEO

Allowing supply with the radial taping.

0.65 max.

0.45⁺–0⁰.^.0¹5

Absolute Maximum Ratings (Ta=25˚C)

■

2.5±0.5 2.5±0.5

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

1.5

the upper figure, the 3:Base

I_C

type as shown in

the lower figure is

also available.

MT2 Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

1.2±0.1

0.65

max.

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

_CB= 40V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

0.1

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 2V, I_C= 100mA

V_CE= 2V, I_C= 500mA^*2

I_C= 500mA, I_B= 50mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

120

340

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.15

0.85

120

0.3

1.2

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

120 ~ 240

170 ~ 340

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