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2SC4117-GR(T5LTYDF PDF预览

2SC4117-GR(T5LTYDF

更新时间： 2024-01-25 12:20:00
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 322K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon

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2SC4117-GR(T5LTYDF 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknown风险等级：5.71
其他特性：LOW NOISE最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：120 V配置：SINGLE
最小直流电流增益 (hFE)：200JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：100 MHz
Base Number Matches：1

2SC4117-GR(T5LTYDF 数据手册

 浏览型号2SC4117-GR(T5LTYDF的Datasheet PDF文件第2页浏览型号2SC4117-GR(T5LTYDF的Datasheet PDF文件第3页浏览型号2SC4117-GR(T5LTYDF的Datasheet PDF文件第4页 
2SC4117  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4117  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
• High voltage: V  
= 120 V  
CEO  
• Excellent h  
linearity: h  
(I = 0.1 mA)/h  
C
(I = 2 mA) = 0.95 (typ.)  
FE C  
FE  
FE  
• High h  
h
= 200 to 700  
FE: FE  
• Low noise: NF = 1dB (typ.), 10dB (max)  
• Complementary to 2SA1587  
• Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
120  
120  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
100  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
20  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
j
125  
T
stg  
−55 to 125  
JEDEC  
JEITA  
―
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 0.006 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 120 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= 5 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= 6 V, I = 2 mA  
200  
⎯
700  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 10 mA, I = 1 mA  
⎯
⎯
⎯
⎯
100  
3.0  
0.3  
⎯
V
CE (sat)  
C
B
f
V
V
V
= 6 V, I = 1 mA  
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
⎯
ob  
E
= 6 V, I = 0.1 mA, f = 1 kHz,  
C
Noise figure  
NF  
⎯
1.0  
10  
dB  
R
= 10 kΩ  
G
Note: h classification GR (G): 200 to 400, BL (L): 350 to 700,  
( ) Marking symbol  
FE  
Marking  
Start of commercial production  
1987-01  
1
2014-03-01  
1234

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