Datasheet > 2SC4118-Y(T5LPAS,F

2SC4118-Y(T5LPAS,F

更新时间： 2024-02-24 21:03:35

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
4页	200K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

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2SC4118-Y(T5LPAS,F 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	风险等级：	5.72
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	30 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	300 MHz	Base Number Matches：	1

2SC4118-Y(T5LPAS,F 数据手册

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2SC4118

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4118

Audio Frequency Low Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

Switching Applications

•

Excellent h

linearity: h

= 25 (min) (V = 6 V, I = 400 mA)

CE C

FE (2)

Complementary to 2SA1588

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

500

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100

JEDEC

JEITA

―

125

SC-70

2-2E1A

stg

−55 to 125

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.006 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Start of commercial production

1987-01

2014-03-01

12 3 4

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