Datasheet > 2SC4118-O(TE85L)

2SC4118-O(TE85L)

更新时间： 2024-09-26 14:27:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	199K
描述
2SC4118-O(TE85L)

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中文翻译

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技术参数
数据手册

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2SC4118-O(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SC4118-O(TE85L) 数据手册

2SC4118

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4118

Audio Frequency Low Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

Switching Applications

•

Excellent h

linearity: h

= 25 (min) (V = 6 V, I = 400 mA)

CE C

FE (2)

Complementary to 2SA1588

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

500

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

−55~125

JEDEC

JEITA

―

SC-70

2-2E1A

stg

TOSHIBA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.006 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4

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