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2SC4118_07 PDF预览

2SC4118_07

更新时间: 2024-09-26 04:26:03
品牌 Logo 应用领域
东芝 - TOSHIBA 运算放大器PC
页数 文件大小 规格书
4页 329K
描述
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications

2SC4118_07 数据手册

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2SC4118  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC4118  
Audio Frequency Low Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching Applications  
Excellent h  
linearity: h  
= 25 (min) (V = 6 V, I = 400 mA)  
CE C  
FE  
FE (2)  
Complementary to 2SA1588  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
55~125  
C
T
j
JEDEC  
JEITA  
T
stg  
SC-70  
2-2E1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
1
2007-11-01  

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