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2SC3969 PDF预览

2SC3969

更新时间: 2024-11-14 06:20:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 224K
描述
isc Silicon NPN Power Transistor

2SC3969 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

2SC3969 数据手册

 浏览型号2SC3969的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC3969  
DESCRIPTION  
·Low Collector Saturation Voltage  
·High Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 400V (Min)  
·High Switching Speed  
APPLICATIONS  
·Designed for switching regulator applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
400  
V
V
V
A
A
400  
7
Collector Current-Continuous  
Collector Current-Peak  
2
ICM  
4
20  
Collector Power Dissipation  
@ TC=25℃  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
2
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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