Datasheet > 2SC3970_2014

2SC3970_2014

更新时间： 2024-11-15 01:19:43

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	186K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3970_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC3970 2SC3970A

DESCRIPTION

·With TO-220Fa package

·High speed switching

·High V_CBO

·Wide area of safe operation

APPLICATIONS

·For high breakdown voltate ,high-speed

switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

800

900

500

UNIT

2SC3970

V_CBO

Collector-base voltage

Open emitter

2SC3970A

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

Open base

Open collector

1.5

I_CM

I_B

3.0

0.5

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

Junction temperature

Storage temperature

150

-55~150

℃

T_j

T_stg

12 3 4

中文翻译

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2SC3970A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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2SC3970A	JMNIC	获取价格	Silicon NPN Power Transistors
2SC3971	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC3971A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
2SC3972	JMNIC	获取价格	Silicon NPN Power Transistors
2SC3972	ISC	获取价格	Silicon NPN Power Transistors
2SC3972	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC3972	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)