是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, SC-59, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.68 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.03 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3841-T2BT63 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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2SC3841-T2BT64 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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2SC3841T62 | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346 |
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2SC3841-T62 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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2SC3841-T62-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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2SC3841T63 | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346 |
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2SC3841-T63 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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2SC3841-T63-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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2SC3841T64 | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346 |
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2SC3841-T64 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili |
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