Datasheet > 2SC3850_2014

2SC3850_2014

更新时间： 2022-02-26 13:29:20

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	156K
描述
Silicon NPN Power Transistors

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2SC3850_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC3850

DESCRIPTION

·With TO-3PN package

·Good linearity of h_FE

·Low collector saturation voltage

APPLICATIONS

·For power switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

500

400

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

T_a=25℃

T_C=25℃

2.5

P_C

Collector power dissipation

125

150

-55~150

T_j

Junction temperature

Storage temperature

℃

T_stg

12 3

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