Hig h h FE
CE (s a t )
L
OW
V
2 S C3 8 5 2 /3 8 5 2 A
Silicon NPN Epitaxial Planar Transistor
Application : Driver for Solenoid and Motor, Series Regulator and General Purpose
External Dimensions FM20(TO220F)
(Ta=25°C)
■
Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
Ratings
Ratings
Symbol
Unit
Symbol
Conditions
Unit
±0.2
4.2
±0.2
10.1
2SC3852 2SC3852A
2SC3852 2SC3852A
10max
c
0.5
2.8
VCBO
VCEO
VEBO
IC
80
60
100
80
V
V
µA
V
ICBO
VCB=
80
100
6
3
1
IEBO
VEB=6V
±0.2
ø3.3
100max
V
µA
V
a
b
V(BR)CEO
hFE
IC=25mA
60min
80min
A
IB
VCE=4V, IC=0.5A
IC=2A, IB=50mA
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
A
500min
0.5max
15typ
25(Tc=25°C)
150
PC
VCE(sat)
fT
V
MHz
pF
W
°C
°C
±0.15
1.35
Tj
±0.15
1.35
Tstg
–55 to +150
COB
50typ
+0.2
-0.1
0.85
2.54
+0.2
-0.1
0.45
±0.2
2.4
2.54
±0.2
2.2
■Typical Switching Characteristics (Common Emitter)
Weight : Approx 2.0g
a. Part No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
B
C E
b. Lot No.
20
20
1.0
10
–5
15
–30
0.8typ
3.0typ
1.2typ
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
3
2
1
0
1.0
3
5mA
1.0
0.5
2
1
0
3mA
2mA
1mA
3A
2A
0.5mA
IC=1A
0
0.001
0
1
2
3
4
5
6
0.005 0.01
0.05 0.1
0.5
1
0
0.5
1.0 1.1
Collector-Emitter Voltage VCE(V)
Base Current IB(A)
Base-Emittor Voltage VBE(V)
–
–
–
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
(VCE=4V)
5
2000
2000
125˚C
1000
500
1000
Typ
500
1
VCB=10V
IE=–2A
100
0.01
100
0.01
0.5
1
10
100
1000
0.1
0.5
1
3
0.1
0.5
1
3
Collector Current IC(A)
Collector Current IC(A)
Time t(ms)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
30
20
10
5
30
20
10
Typ
1
0.5
10
Without Heatsink
Natural Cooling
0.1
Without Heatsink
0.05
3
0
0
5
50
100
–0.005 –0.01
–0.05 –0.1
–0.5 –1
–2
10
0
50
100
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Emitter Current IE(A)
78