Datasheet > 2SC3852_07

2SC3852_07

更新时间： 2024-09-09 07:30:47

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	28K
描述
Silicon NPN Epitaxial Planar Transistor

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数据手册

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2SC3852_07 数据手册

Hig h h FE

CE (s a t )

2 S C3 8 5 2 /3 8 5 2 A

Silicon NPN Epitaxial Planar Transistor

Application : Driver for Solenoid and Motor, Series Regulator and General Purpose

External Dimensions FM20(TO220F)

(Ta=25°C)

■

Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

Ratings

Symbol

Unit

Symbol

Conditions

Unit

±0.2

4.2

±0.2

10.1

2SC3852 2SC3852A

10max

0.5

2.8

VCBO

VCEO

VEBO

100

µA

I^CBO

V^CB=

100

IEBO

V^EB=6V

±0.2

ø3.3

100max

µA

V(BR)CEO

hFE

I^C=25mA

60min

80min

V^CE=4V, IC=0.5A

I^C=2A, IB=50mA

V^CE=12V, IE=–0.2A

V^CB=10V, f=1MHz

500min

0.5max

15typ

25(Tc=25°C)

150

VCE(sat)

MHz

°C

±0.15

1.35

±0.15

1.35

Tstg

–55 to +150

COB

50typ

+0.2

-0.1

0.85

2.54

+0.2

-0.1

0.45

±0.2

2.4

2.54

±0.2

2.2

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 2.0g

a. Part No.

V^CC

(V)

(Ω)

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

I^B2

(mA)

ton

(µs)

tstg

(µs)

C E

b. Lot No.

1.0

–5

–30

0.8typ

3.0typ

1.2typ

–

I^CV^CECharacteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CV^BETemperature Characteristics (Typical)

(VCE=4V)

1.0

5mA

1.0

0.5

3mA

2mA

1mA

0.5mA

I^C=1A

0.001

0.005 0.01

0.05 0.1

0.5

1.0 1.1

Collector-Emitter Voltage V^CE(V)

Base Current IB(A)

Base-Emittor Voltage VBE(V)

–

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

j-a t Characteristics

(VCE=4V)

2000

125˚C

1000

500

1000

Typ

500

V^CB=10V

IE=–2A

100

0.01

100

0.01

0.5

100

1000

0.1

0.5

0.1

0.5

Collector Current IC(A)

Time t(ms)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

Typ

0.5

Without Heatsink

Natural Cooling

0.1

Without Heatsink

0.05

100

–0.005 –0.01

–0.05 –0.1

–0.5 –1

–2

100

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

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